Oxygen scavenging of HfZrO 2 -based capacitors for improving ...
Here, we proposed and demonstrated oxygen scavenging to reduce the IL thickness in an HfZrO x-based capacitor and the thinner IL was confirmed by cross-sectional transmission electron …
Increasing permittivity in HfZrO thin films by surface manipulati
HfZrO films were deposited by metalorganic atomic layer deposition on silicon substrates covered with a thin TiN electrode. Composition and thickness were controlled by the
HfZrOxの・の(C0447)
HfZrOxの・の(C0447) XRD・XAFSによるで、よりなが. . high-kやとしてされているHfZrO x は、によってのがきくすることから、の・ののがな ...
Modulation of crystal structure and electrical properties of …
In the XRD pattern of the undoped HfZrO 2 film, monoclinic and tetragonal peaks were simultaneously observed. However, the crystal structure of the HfZrO 2 film changed to only the tetragonal phase after its doping with a small amount of Al (only 1.1%), and the tetragonal phase was maintained with an increase in the Al doping concentration up ...
The atomic and electronic structure of Hf0.5Zr0.5O2 and …
To improve the properties of ferroelectric layers, it is necessary to know the atomic and electronic structure of oxygen vacancies in Hf x Zr 1-x O 2 and Hf x Zr 1-x O 2:La. Currently, a lot of investigations are devoted to HfZrO-based ferroelectric capacitors [15, 16], but the atomic and electronic structure of Hf x Zr 1-x O 2:La and Hf x Zr 1-x O 2:La having oxygen …
Thickness-dependent ferroelectric properties of HfO2/ZrO2
Compared with HfZrO 4 solid solution, HfO 2 /ZrO 2 nanolaminates showed much lower leakage current density and similar ferroelectricity, which was beneficial for the …
Investigation on the Current Conduction Mechanism of HfZrO x ...
Request PDF | On Jul 16, 2020, Wen-Chung Chen and others published Investigation on the Current Conduction Mechanism of HfZrO x Ferroelectric Memory | Find, read and cite all the research you need ...
Ferroelectricity and Oxide Reliability of Stacked Hafnium ...
Based on experimental results, we find that the stacked HfZrO films not only exhibited excellent ferroelectricity but also demonstrated a high performance on reliability. The …
Ferroelectric (Hf, Zr)O2 Thin Films for High-Density Nonvolatile ...
The HfZrO 2 thin films were deposited on Pt/Al 2 O 3 /SiO 2 /Si substrates by on-axis RF magnetron sputtering at various conditions as listed in Table 2.As the actual surface morphology of the as-received Pt/Al 2 O 3 /SiO 2 /Si substrate found to be depended on the deposition temperature, we used a standard pre-anneal, i.e., 30 min at 700 °C, to stabilize the …
Highly efficient voltage-controlled magnetism in HfZrO/CoFeB …
In conclusion, we fabricate the HfZrO/CoFeB hybrid film and Hall device which shows both the PMA and ferroelectric characteristics, the voltage-dependent magnetic properties are investigated by VSM and anomalous Hall effect, all the results indicate the voltage can modulate the saturation magnetization of CoFeB and the efficiency is over 60% ...
HfZrOₓ-Based Ferroelectric Tunnel Junction With ...
The optimized HfZrO-based FTJ with Ge bottom electrode presents excellent ferroelectricity with a high remnant polarization of 18 μC/cm2, high tunneling electroresistance value of 30, good ...
HfZrO MoS2 …
HZO, (3 nm) HfZrO (HZO) NC 2 nm Al 2 O 3 MoS 2 (NCFET)。 (SS=33.1 mV dec -1 ),/ 1.16נ10 7。 MoS 2。
Development of ALD HfZrO[sub x] with TDEAH/TDEAZ and …
The HfZrO x film thickness increases linearly with the number of ALD cycles. Compared to the halide based process, the process with TDEA precursors and H 2 O yields a lower temperature window, an ...
Ferroelectricity and reliability performance of HfZrO films by N …
The instability of TiN/HfZrO/TiN ferroelectric capacitors becomes a dominant obstacle in its practical application. To improve this problem, the effects of N-plasma treatment at both top and ...
HfZrO x -Based Ferroelectric Synapse Device With 32 Levels of ...
Abstract: We propose a HfZrO x (HZO)-based ferroelectric synapse device with multi-levels states of remnant polarization that is equivalent to multi-levels conductance states. By optimizing the pulse condition, we obtained 32 levels of remnant polarization states for both potentiation and depression. Furthermore, a ferroelectric field-effect transistor is simulated …
Ferroelectricity of HfZrO 2 in Energy Landscape With Surface …
The corresponding energy landscape and surface potential are deduced from the experimental ferroelectricity of HfZrO 2 (HZO) for low-power steep-slope transistor …
Orthorhombic-I Phase and Related Phase Transitions: …
Anti-ferroelectric HfZrO thin films exhibit favorable properties for the potential application in advanced embedded DRAM. However, their failure mechanisms are not well-understood yet. In this work, it was confirmed that the orthorhombic-I phase is directly attributed to the anti-ferroelectric characteristics in HfZrO films. Moreover, around the thickness of 6 nm, a …
HfZrO2/β-Ga2O3 …
, HfZrO 2 HfZrO 2 / ,HfZrO 2,。 β-Ga 2 O 3。0.19 μW/cm
Electromagnetic energy harvesting based on HfZrO tunneling …
Because the currents are at mA level, the HfZrO tunneling diodes coupled to an antenna array can harvest electromagnetic energy at 26 GHz (a bandwidth designated for …
HfZrOx,Applied Physics Letters
,HfZrO x（HZO）。5 nm,TiNWHZO。（ALD）/ HZO。,PtHZOP-E ...
Research on Fatigue Phenomenon and Internal Mechanism of HfZrO …
The fatigue effect of the HfZrO 2 thin film sample plays a vital role in its application in the semiconductor field. This article explores the fatigue mechanism inside the thin film sample by ...
Hf0.5Zr0.5O2
,SrTiO3 (001),La0.7Sr0.3MnO3,(111)Hf0.5Zr0.5O2 (HZO)。X,HZO …
hfzro energieopslagdichtheid
Ferroelectric HfZrO . Instead of using the conventional TiN capping metal to form ferroelectricity in HfZrO x, the NCFET was fabricated on a thickness-optimized Al 2 O 3 /indium tin oxide (ITO)/HfZrO x /ITO/SiO 2 /Si stack, in which the two ITO layers sandwiching the HfZrO x film acted as the control back gate and ferroelectric gate, respectively.
The atomic and electronic structure of Hf0.5Zr0.5O2 and …
To improve the properties of ferroelectric layers, it is necessary to know the atomic and electronic structure of oxygen vacancies in Hf x Zr 1-x O 2 and Hf x Zr 1-x O 2:La. …
Enhanced dielectric and energy storage performances of Hf
The effect of Al doping on HfZrO 2 films was investigated for charge storage devices. Through Al doping, the tetragonal phase with anti-ferroelectricity was stabilized. …
Al2O3 / HfZrOx / Al2O3
HfZrO x850℃。,,。,HfZrO x1nmAl 2 O 3。